The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 1997
Filed:
Apr. 05, 1994
Isao Kidoguchi, Mino, JP;
Kiyoshi Ohnaka, Moriguchi, JP;
Hideto Adachi, Mino, JP;
Satoshi Kamiyama, Sanda, JP;
Masaya Mannou, Hirakata, JP;
Takeshi Uenoyama, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor laser device having an active layer, a pair of cladding layers interposing the active layer and a multi-quantum barrier provided between one of the pair of cladding layers and the active layer is provided. The multi-quantum barrier includes barrier layers and well layers being alternated with each other. Thickness, energy band gap, or impurity concentration of at least one of the barrier layers and well layers in the multi-quantum barrier changes with the distance from the active layer, thereby providing a stable function of reflecting carriers overflowing from the active layer back to the active layer.