The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 1997
Filed:
Dec. 14, 1994
Applicant:
Inventors:
Karl Skjaveland, Ramsay Township, CA;
Peter B Gillingham, Kanata, CA;
Assignee:
Mosaid Technologies Incorporated, Kanata, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518911 ; 365149 ; 257296 ;
Abstract
A DRAM charge storage structure including a p-channel access FET in an n.sup.- doped well of a p.sup.- doped substrate, a p.sup.- channel charge storage capacitor, conductive apparatus connecting a gate of the charge storage capacitor to a drain of the FET, and apparatus for applying a boosted word line voltage to a gate of the FET.
Skjaveland, Karl. (1997). Memory cell and wordline driver for embedded dram in asic process (U.S. Patent No. 5600598). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5600598
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile