The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 1997
Filed:
Oct. 28, 1994
Applicant:
Inventors:
Chenming Hu, Alamo, CA (US);
Hsing-Jen Wann, Albany, CA (US);
Assignee:
Regents of the University of California, Oakland, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 44 ; 437 45 ; 437 69 ;
Abstract
A high speed MOSFET device includes a punchthrough stopper region in the channel of the device formed by high energy ion implantation through the gate electrode and self-aligned therewith. The device has reduced capacitance. A self-aligned recessed channel MOSFET structure includes the punchthrough stopper region to further improve short channel device behavior.
Hu, Chenming. (1997). Method of fabricating a self-aligned high speed mosfet device (U.S. Patent No. 5599728). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5599728
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile