The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 1997
Filed:
Jan. 18, 1995
Sungki O, Milpitas, CA (US);
Philippe Schoenborn, San Jose, CA (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
An MOS structure is disclosed which is provided with a trench in the substrate adjacent the channel region of the substrate, i.e., adjacent the area of the substrate over which the gate oxide and gate electrode are formed. The region of the substrate beneath the trench is lightly doped to provide a deeper LDD region in the substrate between the channel and the drain region so that electrons traveling through the channel to the drain region follow a path deeper in the substrate and farther spaced from the gate oxide in the region of the substrate between the source region and the drain region where high fields are encountered by electrons traveling through the channel from the source region to the drain region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile