The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 1997
Filed:
Sep. 14, 1995
Virinder S Grewal, Fishkill, NY (US);
Volker B Laux, Munich, DE;
Siemens Aktiengesellschaft, Munich, DE;
Abstract
An etch chamber for anisotropic and selective etching of a semiconductor wafer contains a dielectric window and an externally located first electrode member adjacent to the dielectric window for generating a plasma within the chamber. A second electrode member is located within the chamber for exciting the plasma generated by the first electrode member. A third electrode is located between the first electrode member and the dielectric window for sputtering the dielectric window to provide sidewall passivation for anisotropic and selective etching of a semiconductor wafer located within said chamber. Each electrode member is powered by its own separate RF generator. This arrangement enables the independent control of each of the three electrode members to optimize the etching of the semiconductor wafer located within the chamber.