The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 1997
Filed:
Oct. 12, 1994
Applicant:
Inventors:
Charles R Spinner, III, Dallas, TX (US);
Fu-Tai Liou, Carrollton, TX (US);
Assignee:
SGS-Thomson Microelectronics, Inc., Carrollton, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257380 ; 257538 ; 257755 ; 257904 ;
Abstract
An integrated circuit structure contains both highly resistive regions and highly conductive interconnect regions in a single layer of polycrystalline silicon. The resistive regions have a smaller cross section than the interconnect regions as a result of partial oxidation. Their thickness and width are reduced from that of the interconnect regions. The partial oxidation leaves an oxide region, derived from polycrystalline silicon, on both the top and sides of the resistive regions.