The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 1997
Filed:
Oct. 05, 1995
Richard Kleinhenz, Wappingers Falls, NY (US);
Karl P Muller, Wappingers Falls, NY (US);
Klaus Roithner, Wappingers Falls, NY (US);
Masakatsu Tuschiaki, Fishkill, NY (US);
Siemens Aktiengesellschaft, Berlin and Munich, DE;
International Business Machines Corporation, Armonk, NY (US);
Kabushiki Kaisha Toshiba, Kanagawa-ken, JP;
Abstract
A capacitance storage trench for a DRAM cell includes a trench having at least one sidewall, a bottom wall and a plurality of rods extending away from the bottom wall. The at least one sidewall, the bottom wall and the rods are coated with a capacitive dielectric layer. A layer of semiconductive material is disposed over the dielectric layer. The plurality of rods expand the overall surface area of the trench and thus, provide a significant increase in capacitance storage of the storage trench. The capacitance storage trench is formed in a method which includes the steps of forming a plurality of buried oxygen precipitates in a selected region of a substrate and using the oxygen precipitates as micromasks during a conventional trench etch process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile