The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 1997
Filed:
Sep. 28, 1995
Muneo Tamura, Kariya, JP;
Takeshi Yamauchi, Kariya, JP;
Katuhide Niwa, Kariya, JP;
Takeshi Fukazawa, Kariya, JP;
Akira Kuroyanagi, Kariya, JP;
Tooru Yamaoka, Kariya, JP;
Nippondenso Co., Ltd., Kariya, JP;
Abstract
A semiconductor device includes a semiconductor element. A silicon nitride film covers the semiconductor element. The silicon nitride film is made of Si.sub.X N.sub.Y H.sub.Z, where X, Y, and Z denote atomic fractions of Si, N, and H respectively. The silicon nitride film relates to an optical absorption edge wavelength shorter than 254 nm. A mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5.times.10.sup.4 nm.sup.2 or more. The semiconductor element may include a memory element from which information can be erased by exposure to ultraviolet rays.