The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 1996
Filed:
Jun. 07, 1995
Alexander D Lantsman, Middletown, NY (US);
Sony Corporation, Tokyo, JP;
Materials Research Corp., Orangeburg, NY (US);
Abstract
A plasma processing system for sputter etching a substrate with reduced particle contamination comprises a plasma processing chamber having an interior surface which defines a processing space containing a substrate. An electrical element couples electrical energy into a portion of the processing space to generate a plasma therein for etching the substrate. A heating device is coupled to the reactor and is operable for controllably heating the processing chamber interior surface to a selected temperature. The heating device is controlled by a temperature control circuit which turns the heating device to an ON state and operates the heating device to heat the processing chamber to a selected temperature when the electrical element is not coupling energy to the processing chamber and the plasma is extinguished. The selected temperature achieved by the heating device is related to the temperature of the processing chamber during plasma generation such that the interior surface is maintained at a relatively constant temperature before, during and after processing to prevent flaking of sputter material from the interior surface and generation of contamination particles within the processing space.