The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 1996
Filed:
Sep. 05, 1995
Yasushi Fujioka, Nara, JP;
Shotaro Okabe, Nara, JP;
Masahiro Kanai, Soraku-gun, JP;
Hideo Tamura, Nara, JP;
Atsushi Yasuno, Nara, JP;
Akira Sakai, Soraku-gun, JP;
Tadashi Hori, Tsuzuki-gun, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A photovoltaic element comprises a first non-monocrystalline silicon-containing semiconductor layer of a first-conductivity type, a first i-type non-monocrystalline silicon-containing semiconductor layer formed by microwave plasma CVD, a second i-type non-monocrystalline silicon-containing semiconductor layer formed by high-frequency plasma CVD, and a second non-monocrystalline silicon-containing semiconductor layer of a conductivity type opposite to the first-conductivity type, wherein the second semiconductor layer is formed by plasma doping.