The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1996
Filed:
Jan. 29, 1993
Miyoko Noguchi, Tokyo, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device manufacturing method is disclosed, which includes the steps of illuminating obliquely an original having a grating-like pattern, with a light beam having a main wavelength .lambda., and projecting a portion of diffraction light produced by the pattern onto a pupil plane of a projection optical system having a numerical aperture NA, so as to project the pattern onto a predetermined plane related to a photosensitive substrate, wherein the original has a partially isolated pattern and an auxiliary pattern, the partially isolated pattern is such a pattern having no adjoining pattern within a range of D.ltoreq.(.lambda./NA) where D is the distance from one side thereof as measured on the predetermined plane, the auxiliary pattern has a linewidth L which satisfies the relation L.ltoreq.0.2(.lambda./NA) and it extends parallel to at least a portion of the partially isolated pattern, the auxiliary pattern is provided at a distance S from one side of the partially isolated pattern in the direction substantially perpendicular to the one side, and the distance S is within a rage of 0.ltoreq.S.ltoreq.0.1(.lambda./NA).