The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1996
Filed:
May. 23, 1995
Ulf Konig, Ulm, DE;
Andreas Gruhle, Ulm, DE;
Andreas Schuppen, Brackenheim, DE;
Horst Kibbel, Erbach, DE;
Harry Dietrich, Kirchhardt, DE;
Heinz-Achim Hefner, Brackenheim, DE;
Daimler Benz AG, Stuttgart, DE;
Temictelefunken Microelectronic GmbH, Heilbronn, DE;
Abstract
A process for preparing a bipolar transistor for very high frequencies is described, which is especially advantageous for the preparation of heterobipolar transistors and leads to components with low parasitic capacities and low base lead resistance. The process includes forming a structured first layer with collector zone and insulation areas surrounding the collector zone on a monocrystalline lead layer. A series of monocrystalline transistor layers are grown on the first layer over the collector zone by differential epitaxy and a series of polycrystalline layers is grown at the same time over the insulation areas. A series of polycrystalline layers is designed as a base lead.