The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 1996
Filed:
Dec. 22, 1994
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518501 ; 36518517 ; 36518524 ;
Abstract
A non-volatile semiconductor memory cell has a channel layer with a two-layered structure including a surface channel layer and a buried channel layer. The operation of reading out '1' level data or '0' level data from the memory cell is effected by using only the buried channel layer and based on whether the conductivity type of the buried layer is inverted or not. The operation of writing '0' level data is effected by using both of the surface channel layer and the buried channel layer, simultaneously inverting the conductivity types of the surface channel layer and the buried channel layer, and passing a current into the inverted layer to generate hot electrons.