The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 1996
Filed:
Aug. 21, 1995
Yorito Ota, Hyogo, JP;
Katsunori Nishii, Osaka, JP;
Mitsuru Nishitsuji, Osaka, JP;
Hiroyuki Masato, Osaka, JP;
Hiromasa Fujimoto, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
On a semi-insulating substrate is formed a conductive layer and an undoped layer. On specified regions of the conductive layer are formed ohmic electrodes, each serving as a source electrode or a drain electrode, via a pair of square contact regions. The circumferential edges of the contact regions are undercut beneath the ohmic electrodes. Between the pair of contact regions on the conductive layer is formed a gate electrode by self alignment using the ohmic electrodes as a mask. The gate electrode has extended in the direction of gate width and the extended portion serves as a withdrawn portion of the gate electrode. Upper electrodes are formed by self alignment in the same process in which the gate electrode is formed.