The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 1996
Filed:
Oct. 17, 1994
Kenzo Mori, Itami, JP;
Tadashi Kimura, Itami, JP;
Yoshitatu Kawama, Itami, JP;
Nobuaki Kaneno, Itami, JP;
Tatuya Kimura, Itami, JP;
Yuji Okura, Itami, JP;
Hitoshi Tada, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method for fabricating a semiconductor laser includes forming a double heterojunction structure on a first conductivity type semiconductor substrate; forming the double heterojunction structure into a stripe mesa shape by selective etching; successively growing a first conductivity type layer, a second conductivity type current blocking layer, and a first conductivity type current blocking layer on opposite sides of the mesa to embed the mesa; and adding an impurity from a surface of the first conductivity type current blocking layer to form impurity doped regions that electrically separate the second conductivity type current blocking layer from an upper part of the mesa at opposite sides of the mesa.