The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 1996
Filed:
Aug. 14, 1995
Katsuhiro Matsuyama, Hachioji, JP;
Olympus Optical Co., Ltd., Tokyo, JP;
Abstract
A piezoresistive layer extends in the middle of a cantilever extending from a support section. The cantilever is made of n type silicon and is covered with a silicon oxide film. Electrodes are connected to the both ends of the piezoresistive layer. A p type silicon region is formed at the free end of the cantilever, and includes a sharply pointed portion to provide a probe. An electrode is connected to a p.sup.+ type silicon region formed in the p type silicon region, and an electrode is connected to an n.sup.+ type silicon region formed in a position more than 10 .mu.m apart from the p type silicon region. A rectangular through hole is formed in the cantilever between the piezoresistive layer and the probe.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile