The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 1996
Filed:
Jul. 07, 1995
Chih-Cherng Liao, Hsin Chu, TW;
Haw Yen, Hsin Chu, TW;
Vanguard International Semiconductor Corporation, Hsin-Chu, TW;
Abstract
A process for fabricating stacked capacitor, DRAM, devices, has been developed in which the surface area of the storage node has been significantly increased as a result of a unique set of deposition and annealing conditions. An amorphous polysilicon layer, used as the upper layer of the storage node, is ramped up in pure nitrogen, and then insitu annealed, to result in a polycrystalline structure, exhibiting significant surface area increases, due to the formation of surface concave and convex protrusions. The increase in storage node surface area allows for increased DRAM capacitance, without the use of larger dimension stacked capacitors, or thinner dielectrics.