The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 1996
Filed:
Mar. 15, 1994
Hongyong Zhang, Kanagawa, JP;
Yasuhiko Takemura, Kanagawa, JP;
Hideki Uochi, Kanagawa, JP;
Itaru Koyama, Kanagawa, JP;
Minoru Miyazaki, Kanagawa, JP;
Akane Murakami, Kanagawa, JP;
Toshimitsu Konuma, Kanagawa, JP;
Akira Sugawara, Kanagawa, JP;
Yukiko Uehara, Kanagawa, JP;
Abstract
A thin film transistor according to this invention has a gate electrode comprising a lower layer of aluminum of a high purity of over 99.5% and an upper layer of aluminum containing over 0.5% silicon. Alternatively, it has a gate electrode made by adding a IIIa group element to a IIIb group element. Residues produced by the etching of the silicon-containing aluminum gate electrode are etched with a mixture solution of hydrofluoric acid, nitric acid and acetic acid. After contact holes have been formed in an interlayer insulating film, laser annealing is carried out, and metal electrodes are formed in the contact holes thereafter.