The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 1996
Filed:
Jun. 22, 1994
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A dielectric thin film device is constructed by a dielectric thin film using lead erbium zirconate titanate represented by (Pb.sub.1-y Er.sub.y) (Zr.sub.x Ti.sub.1-x)O.sub.3 with 0<x<1 and 0<y<1. This dielectric thin film element has excellent electric characteristics of a leak electric current and fatigue characteristics, etc. The dielectric thin film element may have a thermally grown silicon dioxide film, a titanium film, a platinum lower electrode, a film of lead erbium zirconate titanate represented by (Pb.sub.1-y Er.sub.y) (Zr.sub.x Ti.sub.1-x)O.sub.3 and a platinum upper electrode. These films and electrodes are sequentially formed on an n-type silicon substrate. In this case, 0.45.ltoreq.x.ltoreq.0.75 and 0.05.ltoreq.y.ltoreq.0.1 are set. A method for manufacturing a dielectric thin film has the steps of coating a substrate with a precursor solution of erbium lead zirconate titanate represented by (Pb.sub.1-y Er.sub.y) (Zr.sub.x Ti.sub.1-x)O.sub.3 drying the coated solution at a high temperature to obtain a dry gel; and thermally treating the dry gel at a higher temperature to produce the dielectric thin film is constructed of the lead erbium zirconate titanate represented by (Pb.sub.1-y Er.sub.y) (Zr.sub.x Ti.sub.1-x)O.sub.3 with 0.45.ltoreq.x.ltoreq.0.8 and 0.005.ltoreq.y.ltoreq.0.1.