The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 1996

Filed:

Jul. 15, 1994
Applicant:
Inventors:

Kiyoshi Mitani, Gunma-ken, JP;

Shigenori Saisu, Fukushima-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437-8 ; 437238 ; 437937 ; 148D / ;
Abstract

A method for the determination of the resistivity of an n-type epitaxial layer formed on a silicon substrate is disclosed. This invention resides in either directly determining the true resistivity of a sample by preparing this sample without a natural oxide film which is responsible for the change with the passage of time or indirectly determining the true resistivity of a sample by intentionally forming on the sample a natural oxide film so stable to defy the change with the passage of time and measuring resistivity of this sample.


Find Patent Forward Citations

Mitani, Kiyoshi. (1996). Method for determination of resistivity of n-type silicon epitaxial layer (U.S. Patent No. 5578504). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5578504

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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