The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 1996

Filed:

May. 18, 1995
Applicant:
Inventors:

Fumio Mizuno, Tokorozawa, JP;

Noboru Moriuchi, Ohme, JP;

Seiichiro Shirai, Hamura, JP;

Masayuki Morita, Fussa, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C / ;
U.S. Cl.
CPC ...
430313 ; 430312 ; 430313 ; 430311 ;
Abstract

One object of the present invention is to provide the reduced projection exposure method which enables the exposure of various and fine patterns in manufacturing process of semiconductor devices or semiconductor integrated circuit devices. Structure of the present invention to attain the above object is to carry out the reduced projection exposure using a phase shift mask provided with a prescribed correction pattern on the end of the mask pattern domain of a constant mode or the boundary of the mask pattern domain of plural modes. According to this structure, as the end effects etc. are canceled by the correction pattern, the various and fine patterns can be exposed.


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