The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 1996
Filed:
May. 31, 1995
Yasuaki Murata, Tenri, JP;
Atsushi Yoshinouci, Kashiba, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method of fabricating a thin-film transistor, includes the step of forming a source region and a drain region in a semiconductor thin film having a capping film thereon, by accelerating a plasma source including hydrogen ions and one of Group III ions and Group V ions of the Periodic table, and simultaneously implanting the hydrogen ions and one of the Group III ions and the Group V ions into the semiconductor thin film, wherein there exist a plurality of peaks in a depth profile of a concentration of the hydrogen ions implanted into the semiconductor thin film having the capping film thereon and a second peak from a surface of the capping film among the plurality of the peaks is made to exist in the semiconductor thin film.