The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 1996

Filed:

May. 24, 1995
Applicant:
Inventors:

Toshihide Kikkawa, Kawasaki, JP;

Tatsuya Ohori, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257607 ; 257609 ; 257610 ; 257612 ;
Abstract

A method for growing an epitaxial layer of a group III-V compound semiconductor material that contains oxygen comprises the steps of supplying molecules of an organic compound that contains a group V element and oxygen in the molecule, and decomposing the molecules of the organic compound to release the group V element and oxygen.


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