The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 1996
Filed:
Apr. 20, 1995
John H Hall, San Jose, CA (US);
Other;
Abstract
Disclosed is an integrated transistor structure having increased conductance and operating speed including a complementary insulated gate field effect transistor pair, each including a source and a drain region with a gate contact positioned therebetween, ohmic contacts to the sources, and a rectifying junction contact to each of the drain regions. The gates of the two transistors are interconnected and function as the input terminal, and the two rectifying contacts are interconnected as the output of the device. The structure includes a semiconductor substrate having slow diffusant dopants therein or implanted metal ions of cobalt, molybdenum, or tungsten. The structure further includes an epitaxial semiconductor layer with resistance on the order of 0.5 to 1.0 ohm cm and a thickness of 1.5 to 5.0 .mu.m. The device regions for the field effect transistor pair are formed in the epitaxial semiconductor layer. Current from a positive voltage source is applied through the substrate to the source of a P-channel field effect transistor, thereby reducing switch back effect.