The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 1996
Filed:
Sep. 25, 1995
Naoharu Nishio, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A method for manufacturing a semiconductor device which comprises a silicon single crystal substrate and a cobalt silicide film formed on the silicon single crystal substrate and equipped with a matched crystalline orientation reflecting the crystallinity of the silicon substrate. The present invention also discloses a method for manufacturing a desired semiconductor device comprising a substantially epitaxial and less uneven cobalt silicide film which comprises forming a Si oxide film on the surface of a Si substrate, further forming Ti and Co films, followed by heat treatment. This method provides a convenient process along with a cobalt silicide film which is less uneven in its surface and is excellent in crystal orientation can be selectively formed, and an effect that a contact can be formed which is less uneven and has a low contact resistance.