The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 1996
Filed:
Nov. 22, 1994
Applicant:
Inventors:
Bomy A Chen, Hopewell Junction, NY (US);
Terence B Hook, Jericho Center, VT (US);
Subhash B Kulkarni, Peekskill, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 90 ; 117 95 ; 117 96 ; 117106 ; 437 95 ; 437 96 ;
Abstract
The present invention provides a method of global stress modification which results in reducing number of dislocations in an epitaxially grown semiconducting device layer on a semiconductor substrate where the device layer and the substrate have a lattice mismatch. The invention teaches a method of imparting a convex curvature to the substrate by removing layer(s) of thin film from or adding layers of thin film to the back side of the substrate, so as to achieve a reduced dislocation density in the device layer.