The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 1996

Filed:

Feb. 14, 1995
Applicant:
Inventors:

Masahiro Aoki, Kokubunji, JP;

Tsuyoshi Taniwatari, Hachioji, JP;

Makoto Suzuki, Kokubunji, JP;

Takayuki Tsutsui, Komoro, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ; H01S / ;
U.S. Cl.
CPC ...
372 50 ; 372 26 ; 372 46 ; 372 96 ;
Abstract

A semiconductor optical device fabricating method for easily fabricating on a single substrate a plurality of distributed feedback lasers or distributed Bragg reflector lasers with uniform static and dynamic properties and individually different oscillation wavelengths. A plurality of pairs of stripe type insulating thin film masks are formed over that region of the semiconductor substrate which has optical waveguides formed therein for the lasers. Each pair of stripe type masks has a constant gap therebetween. With the masks in place, optical waveguide layers for the lasers are grown in crystallized fashion through metal organic vapor epitaxy. The stripe type masks in pairs differ dimensionally from one another. The semiconductor optical device thus fabricated comprises on one semiconductor substrate a plurality of distributed feedback lasers or distributed Bragg reflector lasers whose optical waveguide layers differ in both film thickness and composition and whose oscillation wavelengths also differ from one another.


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