The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 1996
Filed:
Jun. 28, 1995
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437195 ; 437231 ; 437238 ; 437977 ;
Abstract
An improved method is described for planarizing dielectric layers which are formed between conductor layers in integrated circuits A three layer spin-on-glass sandwich is formed comprising a first silicon oxide layer, a spin-on-glass layer and a second silicon oxide layer. The improvement comprises performing an O.sub.2 plasma treatment on the first silicon oxide layer prior to forming the overlying spin-on-glass layer. The method prevents delamination (separation) between the first silicon oxide layer and the middle spin-on-glass layer.