The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 1996
Filed:
Oct. 05, 1995
Yoshinobu Nakagome, Hachioji, JP;
Kiyoo Itoh, Higashikurume, JP;
Hitoshi Tanaka, Tachikawa, JP;
Yasushi Watanabe, Hanno, JP;
Eiji Kume, Matsuyama, JP;
Masanori Isoda, Sayama, JP;
Eiji Yamasaki, Fussa, JP;
Tatsumi Uchigiri, Kokubunji, JP;
Hitachi, Ltd, Tokyo, JP;
Hitachi ULSI Engineering Corporation, Tokyo, JP;
Abstract
The present invention is intended to operate a semiconductor device at high speed with low voltage. A circuit configuration is used in which the transfer impedance between a common I/O line and a data line is changed depending on whether information is to be read or written. A current/voltage converter is provided which includes a MISFET different in conduction type to a select MISFET. Thus, the speed of reading information is increased. An intermediate voltage generator having high driving capability is provided. Thus, the circuit has sufficient driving capability for an LSI having large load capacitance. A voltage converter is provided which converts a data line supply voltage or word line supply voltage to a higher voltage. Therefore, stabilized signal transmission is ensured.