The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 1996
Filed:
May. 30, 1995
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 66 ; 257 67 ; 257347 ;
Abstract
A semiconductor device includes a gate electrode, and a semiconductor layer formed on the main surface of the gate electrode with a gate oxide film therebetween. The semiconductor layer has a channel region opposing the main surface of gate electrode and source/drain regions having the channel region therebetween, and is formed so that the bent angle in the vicinity of the boundaries of the channel region and the source/drain regions is beyond 90.degree.. Thus, the semiconductor layer formed in a thin film transistor has no orthogonal bent, and, therefore the concentration of electric fields is suppressed, improving the performance of the thin film transistor.