The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 1996
Filed:
Jul. 08, 1994
Shuji Asai, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The invention provides a semiconductor substrate comprising a substrate of a first material and a crystal growth layer formed on the substrate, the crystal growth layer being made of compound semiconductors different from the first material wherein the substrate has a surface diffusion region being heavily doped with one or more elements of the compound semiconductors. A silicon substrate receives an ion-implantation of one or more elements constituting a compound semiconductor different except for silicon at a high impurity concentration for a heat treatment at a higher temperature than a growth temperature of the compound semiconductor and subsequent cooling down to the growth temperature of the compound semiconductor followed by crystal growth of the compound semiconductor on the substrate.