The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 1996
Filed:
May. 26, 1995
Jengping Lin, Taoyuan Hsien, TW;
United Microelectronics Corporation, Hsinchu, TW;
Abstract
This invention provides a method of fabricating a self-aligned contact of a semiconductor device using a liquid-phase oxide-deposition (LPD) process. A gate electrode and source/drain regions are formed on a semiconductor substrate. A layer of photoresist is coated and patterned overlying an area of the semiconductor substrate that will form a contact. Using the photoresist as a mask, an oxide layer is formed in self-aligned manner by a liquid-phase deposition process. The photoresist is removed to expose a contact portion of the source/drain regions. An interlevel conductive layer is formed on the semiconductor substrate, wherein the interlevel conductive layer is connected to the source/drain regions through the contact portion.