The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 1996

Filed:

Jul. 27, 1994
Applicant:
Inventors:

Akihiko Ishibashi, Sakai, JP;

Isao Kidoguchi, Mino, JP;

Kiyoshi Ohnaka, Moriguchi, JP;

Masaya Mannou, Hiragata, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 48 ; 372 46 ;
Abstract

A semiconductor laser of the invention includes a (100) GaAs substrate having at least one stripe groove formed on an upper face thereof, and a semiconductor multilayer structure formed on the substrate. The stripe groove extends along a <1-10> direction. The semiconductor multilayer structure includes an Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1) including a portion having a surface of an (a11) crystal plane (a>1), the portion being positioned on the stripe groove, a pair of AlGaInP cladding layers provided on the Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1), and an active layer sandwiched between the pair of AlGaInP cladding layers.


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