The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 1996
Filed:
Jun. 05, 1995
Fumitomo Matsuoka, Kawasaki, JP;
Naoki Ikeda, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
An amorphous silicon layer is formed on the side wall of a first wiring layer having a predetermined wiring width and formed in a predetermined shape by patterning. A silicon oxide layer is covering the first wiring layer and the amorphous silicon layer, and a through-hole is formed in the silicon oxide layer so that a portion of the first wiring layer is exposed. A tungsten layer is filling the through-hole, and a second wiring layer connected to the tungsten layer is formed on the silicon oxide layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile