The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 1996

Filed:

Jan. 04, 1995
Applicant:
Inventors:

Harold P Bovenkerk, Worthington, OH (US);

Thomas R Anthony, Schenectady, NY (US);

James F Fleischer, Scotia, NY (US);

William F Banholzer, New York, NY (US);

Assignee:

General Electric Company, Worthington, OH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B / ;
U.S. Cl.
CPC ...
423446 ; 117929 ;
Abstract

Broadly, the present invention is directed to polycrystalline diamond of improved thermal conductivity. The novel polycrystalline diamond consists essentially of at least 99.5 wt-% isotopically-pure carbon-12 or carbon-13. The inventive polycrystalline diamond is formed from at least 99.5 wt-% isotopically-pure carbon-12 or carbon-13. Single-crystal isotopically-pure carbon-12 and carbon-13 diamond are known to possess improved thermal conductivity. Polycrystalline diamond, however, possesses lower thermal conductivity patterns deleteriously impacted by, for example, impurities, isotopic effects, and grain boundary scattering. In fact, grain boundary scattering would lead the skilled artisan to believe that the thermal conductivity of polycrystalline diamond would be substantially unaffected by the isotopic nature of the diamond itself. Unexpectedly, however, isotopic effects were discovered to predominate in impacting the thermal conductivity of polycrystalline diamond consisting essentially of isotopically-pure carbon-12 or carbon-13. This is true whether the isotopically-pure polycrystalline diamond is grown directly or whether individual isotopically-pure carbon-12 or carbon 13 diamond crystals are subjected to sintering for forming a polycrystalline structure, e.g. layer or compact, thereof.


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