The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 1996
Filed:
Jul. 22, 1994
Atsuko Kubota, Yokohama, JP;
Masakatu Kojima, Yokosuka, JP;
Norihiko Tsuchiya, Setagaya-Ku, JP;
Shuichi Samata, Yokohama, JP;
Masanori Numano, Yokohama, JP;
Yoshihiro Ueno, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
Provided is a process for producing a semiconductor silicon wafer by which an intrinsic gettering effect can be improved and at the same time the top side can be made free from faults. A silicon ingot is produced and sliced to obtain silicon wafers. Then, a polycrystal silicon depositing film is formed on one side of a silicon wafer, which is subjected to a heat treatment in an inert gas, a reducing gas or a mixture thereof to discharge oxygen from the vicinity of the other side. Alternatively, after discharging oxygen from the silicon wafer by a heat treatment, a polycrystal silicon depositing film may be formed on one side of the silicon wafer.