The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 1996
Filed:
Jul. 15, 1994
Toshihiko Shindoh, Annaka, JP;
Takeshi Kakegawa, Tomioka, JP;
Kazuhiko Urano, Annaka, JP;
Toshimasa Okamura, Annaka, JP;
Tetsuo Suzuki, Chigasaki, JP;
Masatoshi Sato, Chigasaki, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Nihon Shinku Gijutsu Kabushiki Kaisha, Kanagawa-ken, JP;
Abstract
A silicon oxide depositing source is a mixture of a metallic silicon powder and a silicon dioxide powder. Both the powders are finely divided to a mean particle size of up to 20 .mu.m. They are mixed to give an oxygen to silicon atom ratio between 1.2:1 and 1.7:1. The source is adapted to be evaporated by an electron beam heating technique, allows the power of an electron beam to be increased without a splash phenomenon, and eventually deposits a silicon oxide thin film having transparency and improved barrier properties.