The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 1996
Filed:
Sep. 25, 1991
Applicant:
Inventor:
Isamu Namose, Nagano, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
B44C / ;
U.S. Cl.
CPC ...
1566431 ; 437225 ;
Abstract
A method for fabricating a semiconductor device comprises the steps of introducing a reaction gas into a reaction chamber maintained at a predetermined pressure and applying at least one of a radio frequency and a microwave to activate the reaction gas to thereby process a material to be etched. According to one aspect of the invention, Cl.sub.2 is used as a main etching gas and either and inert gas or a gas having the formula C.sub.n F.sub.(2n+2) is used as an additive gas. The method produces an anisotropically etched profile and, advantageously has a high selectivity for different types of materials. Postprocessing for removing oxide films can also be dispensed with.