The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 1996

Filed:

May. 18, 1995
Applicant:
Inventors:

Osamu Kinoshita, Chiba, JP;

Shigemi Murakawa, Sakura, JP;

Naoki Kubota, Ohta, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ; H01L / ;
U.S. Cl.
CPC ...
156345 ; 1187 / ; 1187 / ; 1187 / ;
Abstract

An etching system contains a plasma chamber, a charge exchange chamber and a processing chamber. The charge exchange chamber and the processing chamber are partitioned with a porous plate provided with a number of fine linear microchannel holes. Positive ions generated by the plasma chamber are accelerated by an accelerating electrode in the charge exchange chamber, charge-exchanged and introduced as neutral particles through the microchannel holes into the processing chamber. Neutral particles are vertically entered into an object to be processed as neutral particle beams that are completely aligned by the microchannel holes. An object with a large surface area can be etched with high accuracy by making the porous plate a size which corresponds to the object. Thus, plasma processing with only neutral particles is carried out with high accuracy even when the surface area of the object is large.


Find Patent Forward Citations

Loading…