The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 1996
Filed:
Aug. 04, 1993
Hiroyuki Okuyama, Kanagawa, JP;
Katsuhiro Akimoto, Kanagawa, JP;
Takao Miyajima, Kanagawa, JP;
Masafumi Ozawa, Kanagawa, JP;
Yuko Morinaga, Kanagawa, JP;
Futoshi Hiei, Kanagawa, JP;
Kazushi Nakano, Tokyo, JP;
Toyoharu Ohata, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor laser using a II-VI compound semiconductor as the material for cladding layers, capable of emitting a blue to green light is disclosed. In an aspect of the semiconductor laser, an n-type ZnSe buffer layer, an n-type ZnMgSSe cladding layer, an active layer made of, for example, ZnCdSe, a p-type ZnMgSSe cladding layer and a p-type ZnSe contact layer are stacked in sequence on an n-type GaAs substrate. A p-side electrode such as an Au/Pd electrode is provided in contact with the p-type ZnSe contact layer. An n-side electrode such as an In electrode is provided on the back surface of the n-type GaAs substrate. In another aspect of the semiconductor laser, an n-type optical guiding layer made of ZnSSe, ZnMgSSe or ZnSe is provided between the n-type ZnMgSSe cladding layer and the active layer, and a p-type optical guiding layer made of ZnSSe, ZnMgSSe or ZnSe is provided between the p-type ZnMgSSe cladding layer and the active layer.