The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 1996
Filed:
Jul. 05, 1994
Applicant:
Inventors:
Majid M Hashemi, Tempe, AZ (US);
Saied N Tehrani, Scottsdale, AZ (US);
Assignee:
Motorola, Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 41 ; 437912 ; 437176 ; 437184 ;
Abstract
A method of fabricating high breakdown voltage MESFETs forming a conduction channel in a GaAs substrate adjacent the surface, forming high temperature stable source and drain ohmic contacts and a Schottky gate contact on the surface of the substrate in overlying relationship to the channel and in spaced relationship, and depositing a layer of low temperature GaAs passivation material over the substrate surface and the source, drain and gate contacts. Openings are then etched in the passivation material for contacting the source, drain and gate contacts.