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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5512772 B1

PDFFull Text
Date of Patent:
Apr. 30, 1996

Filed:

Sep. 20, 1994

Semiconductor device having bipolar transistor and mos transistor

Applicant:
Inventors:

Takeo Maeda, Tokyo, JP;

Hiroshi Momose, Tokyo, JP;

Yukihiro Urakawa, Kawasaki, JP;

Masataka Matsui, Tokyo, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:

Finnegan, Henderson, Farabow, Garrett & Dunner

Primary Examiner:

Mark V Prenty

Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257370 ; 257 52 ; 257197 ; 257 65 ; 257616 ;
Abstract

A semiconductor device of this invention includes a bipolar transistor and MOS transistors which are formed on the same semiconductor substrate. The bipolar transistor is hetero-bipolar transistor having a hetero junction. The hetero-bipolar transistor is a bipolar transistor of double-hetero structure in which a material used for forming the base region thereof has a band gap narrower than a material used for forming the emitter and collector regions thereof.

Find Patent Forward Citations

Maeda, Takeo. (1996). Semiconductor device having bipolar transistor and mos transistor (U.S. Patent No. 5512772). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5512772

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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