The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 1996

Filed:

Jun. 20, 1995
Applicant:
Inventors:

Howard E Katz, Summit, NJ (US);

Gary N Taylor, Bridgwater, NJ (US);

Assignee:

AT&T Corp., Murray Hill, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430296 ; 430313 ; 430314 ; 430315 ; 430323 ; 430325 ; 430942 ; 430966 ; 430967 ; 1566281 ; 1566431 ;
Abstract

The invention is directed to a process for fabricating an integrated circuit. An imaging layer is deposited on a substrate. The imaging layer is an energy sensitive resist material. The energy sensitive resist material contains moieties that preferentially bind to refractory material. A latent image of a pattern is introduced into the imaging layer by patternwise exposing the imaging layer to energy. The patternwise exposure introduces a selectivity into the resist material that is exploited to bind refractory material preferentially to either the exposed resist material or the unexposed resist material, but not both. The refractory material forms an etch mask over the resist material to which it preferentially binds. This etch mask is then used to transfer a pattern that corresponds to the latent image into the substrate.


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