The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 1996
Filed:
May. 04, 1995
Applicant:
Inventors:
Chii-Chang Lee, Austin, TX (US);
Hisao Kawasaki, Austin, TX (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257767 ; 257773 ; 257775 ; 257776 ; 257758 ; 437180 ;
Abstract
Semiconductor devices having improved electromigration resistance in their connections through dielectric layers are described. Where a conductive metal line overlies a dielectric layer and makes contact to a lower conductive structure through the dielectric layer by virtue of a conductive member, such as a tungsten plug or metal contact, the conductive metal line is provided with an end portion not otherwise connected to a conductive structure. The end portion serves as a reservoir of extra conductive material supplying the conductive metal line as the line is depleted through stress migration and/or electromigration.