The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 1996

Filed:

Feb. 14, 1994
Applicant:
Inventors:

Karl-Otto Velthaus, Goppingen, DE;

Reiner H Mauch, Stuttgart, DE;

T Achim Oberacker, Gartringen, DE;

Hans-Werner Schock, Stuttgart, DE;

Sey-Shing Sun, Beaverton, OR (US);

Randall C Wentross, Portland, OR (US);

Richard T Tuenge, Hillsboro, OR (US);

Assignee:

Planar Systems, Inc., Beaverton, OR (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 66 ; 427 69 ; 4272481 ; 4272552 ;
Abstract

A multi-source reactive deposition process for preparing a phosphor layer for an AC TFEL device having the chemical formula M.sup.II M.sup.III.sub.2 X.sub.4 :RE, where M.sup.II is a group II metal taken from the group magnesium, calcium, strontium and barium, M.sup.III is a group III metal taken from the group aluminum, gallium and indium, X is taken from the group sulfur and selenium, and RE comprises a rare earth activator dopant taken from the group cerium and europium is disclosed. The phosphor film is formed in crystalline form on a substrate heated to a temperature between 400.degree. and 800.degree. C. by depositing more than one deposition source chemical where at least one of the deposition source chemicals of the group II metal or the group III metal is a compound.


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