The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 1996
Filed:
Aug. 22, 1994
Norihito Tokura, Okazaki, JP;
Kunihiko Hara, Nukata, JP;
Nippondenso Co., Ltd., Kariya, JP;
Abstract
A vertical type semiconductor device is provided with an improved construction which greatly decreases the on-resistance without impairing the breakdown voltage thereof. In the fundamental DMOS cells that control a current to constitute the vertical semiconductor device, through-hole cells are arranged along the sides of a cell having a channel. The through-hole cell includes a through-hole extending from the surface of an n.sup.- -type drift region toward an n.sup.+ -type drain region, and also includes an n.sup.+ -type through-hole region that is formed by diffusing impurities from the inner wall of the through-hole which is continuous with the n.sup.+ -type drain region. A breakdown voltage of the element is maintained by the n.sup.- -type drift region between a p-type well region and the n.sup.+ -type through-hole region or the n.sup.+ -type drain region. Given the unique arrangement of the through-hole cells, the JFET resistance component becomes negligibly small between the DMOS cells neighboring along the sides of the cells despite the fact that the cells are finely formed, and a small on-resistance is exhibited.