The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 1996
Filed:
Jul. 15, 1993
Souichi Nadahara, Poughkeepsie, NY (US);
Kikuo Yamabe, Yokohama, JP;
Hideyuki Kobayashi, Yokohama, JP;
Kunihiro Terasaka, Tokyo, JP;
Akihito Yamamoto, Kanagawa, JP;
Naohiko Yasuhisa, Ooita, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A method of processing a semiconductor substrate includes the step of subjecting a semiconductor substrate to a heat treatment under a gaseous atmosphere. The method comprises the step of subjecting a semiconductor substrate to a high temperature heat treatment at temperatures not lower than 1100.degree. C. under a non-oxidizing atmosphere, wherein heat treatments before the high temperature heat treatment applied to the semiconductor substrate are applied under heat treating temperatures and heat treating time which fall within a region defined by a line connecting four points of (900.degree. C., 4 minutes), (800.degree. C., 40 minutes), (700.degree. C., 11 hours) and (600.degree. C., 320 hours) in a graph, in which the heat treating temperature is plotted on the abscissa and the heat treating time is plotted on the ordinate of the graph.