The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 1996
Filed:
Feb. 16, 1995
Applicant:
Inventor:
Jengping Lin, Taoyuan Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437239 ; 437979 ; 437983 ; 437 56 ;
Abstract
A method for fabricating gate oxide layers of different thicknesses on a silicon substrate. A field oxide layer is formed on a predetermined portion of the silicon substrate to define first active regions and second active regions. A first gate oxide layer is formed over the first and second active regions. A barrier layer is formed to cover a portion of the first gate oxide layer within the first active regions. The portion of the first gate oxide layer within the second active regions is then removed utilizing the barrier layer as masking. A second gate oxide layer is then formed over the second active regions.