The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 1996

Filed:

Jan. 31, 1995
Applicant:
Inventors:

John C Cheng, San Jose, CA (US);

Timothy M Reith, Morgan Hill, CA (US);

James S Wong, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11B / ; G03F / ;
U.S. Cl.
CPC ...
430-5 ; 430323 ; 430325 ; 430326 ; 430328 ; 430329 ;
Abstract

A method of manufacturing a photomask for the production of dual depth features on substrates, and the photomask so manufactured, wherein the method of manufacturing the photomask is comprised of the steps of: (1) coating a substrate which transmits at least two selected wavelengths with: a) an optical filter material which prevents the transmission of at least one of the wavelengths, b) an opaque masking material, and c) a dual tone photoresist; (2) using a single mastering tool to selectively expose areas of the coated substrate to one of the wavelengths; (3) developing the photoresist; (4) etching the exposed masking material and optical filter material; (5) exposing the remaining coated substrate; (6) developing the remaining photoresist; (7) etching the exposed surface; and (8) stripping away the remaining photoresist.


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