The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 1996

Filed:

Aug. 31, 1994
Applicant:
Inventor:

Yoshio Hayashide, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257758 ; 257760 ;
Abstract

An object of the present invention is to completely reduce a difference in level in a short time at a convex pattern spreading horizontally on a large scale and obtain a semiconductor device having a planarized surface. An insulating film is formed on a semiconductor substrate to cover a horizontally spreading convex pattern and to fill in a concave portion. A portion of insulating film located on a planarized portion of convex pattern is selectively etched away so as to leave a frame-shaped insulating film having a width of 1-500 .mu.m at least on the outer periphery portion of convex pattern. Insulating film left on semiconductor substrate is etched by chemical/mechanical polishing method, thereby planarizing a surface of the semiconductor substrate.


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